High-pressure gas lasers on Ar I,Xe I,and Kr I transitions |
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Authors: | PL Chapovsky VN Lisitsyn AR Sorokin |
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Institution: | Institute of Semiconductor Physics, Academy of Science of USSR, Siberian Branch, Novosibirsk, 90 USSR |
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Abstract: | Lasing has been obtained in a high pressure (up to 17 atm) gas on Ar I, Xe I, and Kr I transitions. The gas was excited by a transverse discharge with volume preionization by a discharge through a dielectric. New laser lines belonging to Ar I (9123, 9658, 10470, and 11488 Å), Xe I (8232 Å), and Kr I (8929 Å) have been found. The dependences of the spectral and energetic characteristics of the He-Ar laser on the conditions of gas pressure and discharge have been investigated in detail. At high pressures, wide (about 50 HGz) laser lines have been found as well as high power (>105 W) laser lines. Time characteristics of the radiation have been investigated and optimal conditions for the generation power have been defined. |
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