Vibrational spectra of vapor-deposited binary phosphosilicate glasses

Room temperature infrared transmission spectra in the range 4000-250 cm^?1 of binary phosphosilicate glass (PSG) films deposited by reacting argon- or nitrogen-diluted PH₃SiH₄O₂ mixtures on heated silicon substrates at 300–400° C have been obtained across the whole composition range. In all the as-deposited binary films, an absorption at ≈1300 cm^?1 characteristics of the P=O vibration was found to persist, together with a couple of broad absorptions in the regions 1200-900 cm^?1 and 500 cm^?1. Using a differential infrared technique the broad feature in the higher frequency region has been resolved into two well-defined bands at ≈1100 and 970 cm^?1. A detailed analysis shows that the intensity variation of the differential band at ≈1100 cm^?1 conforms well, at least to 50 mol% P₂O₅, to a simple structural model that yields an analytic distribution of POSi linkages as a function of composition by assuming chemical mixing in the vapor-deposited P₂O₅SiO₂ system. Furthermore, the system may be written as (P=O)₂ O₃SiO₂ in order to emphasize the similarity of its coordination scheme with that of the B₂O₃SiO₂ system studied earlier. The nature of these CVD films has also been elucidated by thermal and water treatments.