Structures of vapour-deposited amorphous films of arsenic chalcogenides

The structures of vapour-deposited amorphous films of composition As_xSe_1?x′, with x between 0 and 1, have been investigated by X-ray diffraction. In all cases the structure of the freshly deposited film differs very considerably from that of the corresponding bulk glass. For the elemental amorphous films the structure is highly disordered and contains voids which for Se cannot be annealed out below the crystallization temperature of 70°C or, for As, below the temperature ($\text{?130°}\text{C}$) where the As film re-evaporated. Annealing of the arsenic selenide films at temperatures below T_g causes the structures to relax towards those of the bulk, with a distribution of activation energies around 25 kJ mol^?1. The composition of the vapour has been examined by mass spectroscopy and it is concluded that even if some molecular identity is retained on condensation there must be considerable cross-linking to give the observed structural behaviour.