MBE-grown MCT hetero- and nanostructures for IR and THz detectors |
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| Institution: | 1. Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia;2. Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine;3. Tomsk State University, 36 Lenin aven., 634050, Tomsk, Russia;4. Novosibirsk State University, 1 Pirogov str., Novosibirsk, 630090, Russia;1. Dept. of Electronics and Electrical Engineering, IIT Guwahati, India;2. Warsaw University of Technology, Institute of Electronic Systems, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland;3. National Institute of Telecommunications, ul. Szachowa 1, 04-894 Warsaw, Poland;1. Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai, 400076, India;2. Department of chemical engineering, Monash University, Australia;3. IITB-Monash research academy, Mumbai, 400076, India;1. School of Electrical and Computer Engineering, Faculty of Engineering, University of Tehran, Tehran;2. Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland;3. Delft Institute of Microsystems and Nanoelectronics (DIMES-EKL), Delft University of Technology, Delft 2628CT, the Netherlands;1. Applied Electromagnetics and Telecommunication Research Group, University of Nottingham (UNM), Affiliated to the George Green Institute for Electromagnetics Research, Nottingham, United Kingdom;2. Department of Electrical and Electronics Engineering, University of Nottingham (UNM), Malaysia;3. Department of Electrical Engineering, California Polytechnic State University, San Luis Obispo, CA, 93405, USA;1. National Research Tomsk State University, 634050, Tomsk, Russia;2. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia |
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| Abstract: | We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3” in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows for the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single- or dual-band IR and THz detectors.We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150–300-GHz subterahertz and infrared ranges from 3 to 10 μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275 GHz, respectively. |
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| Keywords: | Growth HgCdTe Molecular-beam epitaxy Detector Infrared Terahertz |
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