Multiphoton route to ZnO nanowire lasers |
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| Authors: | Zhang C F Dong Z W You G J Qian S X Deng H |
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| Affiliation: | State Key Laboratory for Applied Surface Physics and Department of Physics, Fudan University, Shanghai, China. |
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| Abstract: | With intense femtosecond laser excitation, multiphoton absorption-induced stimulated emission and laser emission in ZnO bulk crystal and nanowires have been demonstrated at room temperature. UV-stimulated emission peaks appeared in both bulk crystal and nanowires when the excitation exceeded certain thresholds, and a sharp lasing peak with a linewidth of ~0.5 nm was observed from ZnO nanowires. The emission properties were attributed to the band-edge emission of the recombination of carriers excited by two- and three-photon absorption processes in the wide-bandgap semiconductor. |
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