| MOSFET开态热载流子效应可靠性 |
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| 引用本文： | 穆甫臣,薛青.MOSFET开态热载流子效应可靠性[J].半导体杂志,2000,25(4):51-59. |
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| 作者姓名： | 穆甫臣 薛青 |
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| 作者单位： | 北京大学微电子所,北京 |
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| 摘 要： | 综述了近年来ＭＯＳＦＥＴ的热载流子效应和可靠性的问题。总结了几种热载流子，并在此基础上详细讨论了热载流子注入（ＨＣＩ）引起的退化机制。对器件寿命预测模型进行了总结和讨论。为ＭＯＳＦＥＴ热载流子效应可靠性研究奠定了基础。
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| 关 键 词： | 可靠性 热载流子效应 场效应晶体管 MOSFET |
HCI Reliability in MOSFET's under On State |
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| Authors: | MU Pu chen XUE Jing XU Ming zhen TAN Chang hua |
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| Abstract: | The issues of hot carrier effects in MOSFET's are reviewed. Hot carriers are summarized. On this basis, the mechanisms of Hot Carrier Induced (HCI) degradation under on state stress modes are discussed. Lifetime prediction models are summarized and discussed. |
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| Keywords: | Reliability Hot Carrier Effects MOSFET Lifetime Prediction ModD |
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