A model for the occurrence of transient negative photoconductivity in silicon doped with gold |
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| Authors: | H Kimura T Kurosu Y Akiba M Iida |
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| Institution: | (1) Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, 259-12 Hiratsuka, Kanagawa, Japan |
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| Abstract: | A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms has been investigated. On the basis of the trapping of photo-excited carriers into two deep levels of gold atoms, a model for the occurrence of transient negative photoconductivity is proposed and related qualitatively to some experimental results. |
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| Keywords: | 72 40 72 20 85 30 |
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