Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells

The effects of the growth temperature and ambient of GaN quantum barriers on the characteristics of InGaN/GaN multi-quantum wells (MQWs) grown by a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition (TPIS-MOCVD) system were investigated. The improvement of optical, structural properties and surface morphology in the MQWs with increasing the growth temperature of quantum barriers was found. Without a GaN capping layer, there were many pits and the thickness of quantum pair reduced by the thermal etching during the temperature-ramping process. Photoluminescence (PL) peaks showed a blue-shift and double peaks, but relative PL intensity abruptly increased due to the suppression of deep level related defects and smooth surface morphology caused by the increased surface mobility of adatom in the high temperature region. By using a GaN capping layer on the InGaN well layer, the thermal decomposition of the InGaN well layer was suppressed and pits on the surface abruptly reduced. A hydrogen carrier gas for the GaN barrier growth also improved the optical and structural properties of MQWs.