Microscopic investigations of the indium nitride crystals with flower-like morphology grown by means of halide chemical vapour deposition under atmospheric pressure |
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| Institution: | 1. Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan;2. Shizuoka Industrial Research Institute of Shizuoka Prefecture, 2078 Makigaya, Shizuoka, Shizuoka 421-1298, Japan;1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;2. Materials Science Division, Atomic Energy Centre, Dhaka 1000, Bangladesh;3. Department of Electronics and Materials Science, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;4. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;5. School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan;1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;2. Materials Science Division, Atomic Energy Centre, Dhaka, 1000, Bangladesh;3. Department of Electronics and Materials Science, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;4. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan;5. Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-85770, Japan;6. School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan;1. Department of Physics, Fu Jen Catholic University, New Taipei City, 24205, Taiwan;2. Department of Mechanical Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan;3. Department of Mechanical Engineering, Hwa Hsia University of Technology, New Taipei City, 23567, Taiwan;4. Department of Physics, Montana State University, Bozeman, MT, 59717, USA;5. National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan;1. Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku Naka-ku, Hamamatsu 432-8561, Japan;2. Materials Science Division, Atomic Energy Centre, Bangladesh Atomic Energy Commission, Dhaka 1000, Bangladesh;3. Department of Electronics and Materials Science, Shizuoka University, 3-5-1 Johoku Naka-ku, Hamamatsu 432-8561, Japan;4. Department of Materials Science and Biotechnology, Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-85770, Japan;5. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152-8550, Japan;6. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku Naka-ku, Hamamatsu 432-8561, Japan;1. Institute of Physical Chemistry, Justus-Liebig-University Giessen, D-35392 Giessen, Germany;2. Vasile Goldis Western University of Arad, Romania;1. Biodiversity Research Institute (IRBio) and Department of Evolutionary Biology, Ecology and Environmental Sciences (BEECA), Faculty of Biology, Universitat de Barcelona, Av Diagonal 643, Barcelona 08028, Spain;2. Centre for Advanced Studies of Blanes (CEAB-CSIC), Accés Cala St. Francesc 14, Blanes 17300, Spain |
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| Abstract: | Indium nitride prepared under atmospheric pressure using a halide chemical vapour deposition method has been examined by means of a variety of analytical techniques. From the scanning electron microscopic observations of the crystals deposited onto a Si(100) substrate, it was found that they have flower-like morphology. Based on the electron diffraction and X-ray photoelectron spectroscopic analyses, it was deduced that the flower-like InN crystals have a stoichiometry close to In:N=1:1. Transmission electron diffraction and selected area electron diffraction images showed that each petal and a style constituting the flower are of single crystals form with staggered hexagonal bipyramidal structure. |
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