Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy |
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| Institution: | 1. National Engineering Research Center of Chemical Fertilizer Catalyst, College of Chemical Engineering, Fuzhou University, Fuzhou 350002, PR China;2. State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, PR China;3. National Experimental Teaching Demonstrating Center, College of Chemical Engineering, Fuzhou University, Fuzhou 350116, PR China;4. State Key Laboratory of Photocatalysis on Energy & Environment, Fuzhou University, Fuzhou 350116, PR China;1. Advanced Environmental Biotechnology Centre, Nanyang Environment and Water Research Institute, Nanyang Technological University, 1 Cleantech Loop, Singapore 637141, Singapore;2. School of Civil and Environmental Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore |
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| Abstract: | Self-assembled GaInNAs/GaAs quantum dots (QDs) are promising structures for extending the emission wavelength of GaInNAs/GaAs quantum wells from 1.3 to 1.55 μm and beyond. We report herein the growth of GaInNAs/GaAs quantum dot samples of different deposited thickness by solid source molecular beam epitaxy using active nitrogen radicals generated by a radio frequency nitrogen plasma source. Images from atomic force spectroscopy reveal the increase of non-uniformity QDs size following the increase in the deposited thickness. Temperature-dependent photoluminescence (PL) measurements show PL line width shrinkage at low temperature suggests the relaxation of carriers into neighboring QD local-energy minimum. The low thermal activation energy of ∼72 meV, estimated from the temperature-dependent integrated PL intensity curve suggests the existence of non-radiative recombination centers that quench the luminescence intensity at higher temperature. |
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