Numerical analysis for the growth of GaN layer in MOCVD reactor |
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| Institution: | 1. Graduate School, Department of Precision Mechanical Engineering, Chonbuk National University, Chonju 561-756, South Korea;2. Division of Mechanical Engineering, Automobile Hi-Tech Research Institute, Chonbuk National University, Chonju 561-756, South Korea;3. Division of New Materials Engineering, Chonbuk National University, Chonju 561-756, South Korea;4. Hanvac Corporation, South Korea;1. School of Microelectronics, Xidian University, Xi’an 710071, China;2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Xidian University, Xi’an 710071, China;1. Crystal Growth Centre, Anna University, Chennai, India;2. Manonmaniam Sundaranar University, Tirunelveli, India;3. Department of Micro and Nanosciences, Aalto University, Finland;4. Department of Energy, University of Madras, Guindy Campus, Chennai, India;1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea;2. TGO tech, Hwasung-City, Gyeonggi-Do, 445-812, Republic of Korea |
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| Abstract: | The axi-symmetric vertical reactor is a classical reactor configuration for the growth of compound semiconductors by MOCVD. In the present study, the modified reactor is developed to produce uniform and large-volume epitaxial deposition of gallium nitride (GaN). A comprehensive knowledge of the flow, thermal and concentration fields, as well as gas surface reaction, is necessary to develop a CVD reactor. The full elliptic governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactant, and deposition rate uniformity. As results, inlet flow rate, inclination angle of wall and inlet design are proposed for optimum operational conditions. |
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