Raman scattering under pressure in ZnGa2Se4 |
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| Institution: | 1. Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan;2. Materials and Chemical Technologies Research Institute, Tubitak, Mam, Gebze/Kocaeli, Turkey;3. Institute of Materials Science, University of Tsukuba, Tsukuba, Japan;1. University Center of Ahmed Zabana, Bourmadia, BP 48000, W. Relizane, Algeria;2. Film Device Fabrication-Characterization and Application FDFCA Research Group USTO, Oran, Algeria;3. Physics Faculty, USTO-MB University, BP1505 Oran, Algeria;4. Unité de physique des dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis, Tunisia;5. Physics Department, Faculty of Arts and Sciences, Marmara University, Goztepe Campus, 34722 Kadikoy, Istanbul, Turkey;1. Département de physique, Faculté des Sciences Exactes, Université Abderrahmane Mira, Bejaia 6000, Algeria;2. Laboratoire de physique des Matériaux, Université Amar Telidji, BP 37G, Laghouat 03000, Algeria;3. Laboratoire de Recherche: Caractérisation et Valorisation des Ressources Naturelles, Université de Bordj Bou Arreridj, 34000, Algeria;4. Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif 1, 19000 Setif, Algeria;5. LPQ3M Laboratory, Faculty of Sciences & Technology, Mascara University, Mascara 29000, Algeria;6. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;1. College of Nanotechnology, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;2. Catalytic Chemistry Research Unit, Faculty of Science, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;3. Department of Chemistry, Faculty of Science, King Mongkut''s Institute of Technology Ladkrabang, Bangkok 10520, Thailand;4. Graduate School of Natural Science & Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan;1. Microwave Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;2. INFN, Sezione di Padova, Via Marzolo 8, Padova 35131, Italy;1. Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, India;2. Physics Research Centre, S.T. Hindu College, Nagercoil, Tamilnadu 629003, India |
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| Abstract: | The Raman scattering spectra of ZnGa2Se4 under pressure were investigated at 300 K up to 18.9 GPa. Two stages were observed in the pressure dependences of Raman bands. Such behavior in accordance with the experimental findings existing in literature and was attributed as arising due to the order–disorder phase transition in the cation sublattice.Using the Harrison–Keating's model of the lattice dynamics modified for the crystals with the tetragonal structure, the bulk modulus B and the mode-Grüneisen parameters Γi were determined for the first time. It is shown that a better agreement between the experimental and calculated values of Γi is observed, if one takes into consideration different frequency-pressure behavior for the bond-bending and the bond-stretching parameters, which determine the low- (lower than 140 cm−1) and high- (higher than 140 cm−1) frequency phonons, respectively. |
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