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Materials design of p-type transparent conducting oxides of delafossite CuAlO2 by super-cell FLAPW method
Affiliation:1. Department of Physics, Texas A & M University at Qatar, Education City, Doha 23874, Qatar;2. NanoMagnetism and Modeling Team, IMMM UMR 6283, University du Maine - LUNAM, 72085 Le Mans, France;3. Science Department, American University of Technology, Fidar Campus, Halat, Lebanon;4. American University of the Middle East, College of Engineering and Technology, Egaila, Kuwait;5. Qatar Energy and Environment Research Institute, Qatar Foundation, PO Box 5825, Doha, Qatar;1. Department of Materials Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India;2. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Navy Nagar, Colaba, Mumbai 400005, India;3. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India;4. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India;5. Department of Physics and School of Nano Science & Technology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India;1. Instituto de Física, Pontificia Universidad Católica de Chile, Av. Vicuña Mackenna 4860, Macul, Santiago, Chile;2. Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506-6315, USA
Abstract:We propose a new crystal growth method and a new valence control method to fabricate a low-resistive p-type and transparent conducting oxides of Delafossite CuAlO2 based on ab initio electronic structure calculation using a super-cell FLAPW method. We propose a Cu-vacancy-acceptor doping method by decreasing a Cu-vapor pressure in order to increase a Cu-vacancy concentration. We also propose the Mg- or Be-impurity doping method at the Al-site using the thermal non-equilibrium crystal-growth method with extreme conditions in MBE or MOCVD by decreasing an Al-vapor pressure and avoiding the Mg- or Be-atom doping at the Cu-site by increasing a Cu-vapor pressure.
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