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Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition
Institution:1. Laboratoire verres et céramiques, UMR CNRS 6512, institut de chimie de Rennes, Université de Rennes 1, 35042 Rennes cedex, France;2. Laboratoire de chimie du solide et inorganique moléculaire, UMR CNRS 6511, institut de chimie de Rennes, Université de Rennes 1, 35042 Rennes cedex, France;1. School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 2120013,PR China;2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 2120013,PR China;3. School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK;1. Department of Materials Science and Engineering, WW4-LKO, University of Erlangen-Nürnberg, Martensstrasse 7, D-91058 Erlangen, Germany;2. Department of Chemistry, King Abdulaziz University, Jeddah, Saudi Arabia;1. Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo, FERMiO, Gaustadalléen 21, NO-0349 Oslo, Norway;2. Department of Microbiology, Oslo University Hospital HF, Oslo, Norway;3. Department of Medical Biochemistry, Institute for Clinical Medicine, University of Oslo, Oslo, Norway;4. Department of Clinical and Molecular Medicine, Faculty of Medicine and Health Sciences, Norwegian University of Science and Technology (NTNU), PO Box 8905, NO-7491 Trondheim, Norway;5. SINTEF Industry, Department of Materials and Nanotechnology, Group of Nano and Hybrid Materials, Oslo, Norway
Abstract:TaON and Ta3N5 thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600–800 °C temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
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