Ab initio total energy calculations of copper nitride: the effect of lattice parameters and Cu content in the electronic properties |
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Institution: | 1. Department of Materials Engineering and Convergence Technology and RIGET, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 52828, Republic of Korea;2. Research Institute of Industrial Science and Technology (RIST), 67 Cheongam-ro, Nam-gu, Pohang-si, Gyeongbuk, 37673, Republic of Korea |
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Abstract: | We have studied the structural and electronic properties of bulk copper nitride by performing first principles total energy calculations using the full-potential linearized augmented plane wave (FP-LAPW) method. In our study we have considered two types of cells: the ideal cubic anti-ReO3 structure corresponding to Cu3N, and a unit cell with an extra Cu atom at the center of the cube. In the first case, our calculated lattice parameter a=3.82 Å is in excellent agreement with the experimental value a=3.807 Å. The structure is semiconductor with a small indirect band-gap. The increasing of the lattice parameter results in larger band-gaps. An addition of an extra Cu atom at the center of the cell results in a slightly larger lattice parameter a=3.88 Å, and the structure becomes fully metallic. Our calculated value is similar to the experimental lattice parameter corresponding to a metallic copper nitride film. |
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