Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors |
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| Institution: | 1. Department of Information Technology, Ghent University-IMEC, St. Pietersnieuwstraat 41, B-9000 Gent, Belgium;2. Umicore, Watertorenstraat 33, B-2250 Olen, Belgium;3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;1. BeamExpress SA, Lausanne, CH-1015, Switzerland;2. Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Switzerland;1. Centro de Investigaciones en Dispositivos Semiconductores, BUAP, C. U., 14 Sur y Av. San Claudio, Puebla, Pue. 72570, México;2. Facultad de Ciencias de la Computación, BUAP, C. U., 14 Sur y Av. San Claudio, Puebla, Pue. 72570, México;3. Instituto de Investigación en Comunicaciones Ópticas, Universidad Autónoma de San Luis Potosí, Av. Karakorum, Lomas Cuarta Sección, San Luis Potosí, S.L.P. 78210, México;4. Sección de Electrónica del Estado Sólido, CINVESTAV-IPN, Av. IPN No. 2405 Col Zacatenco, México D. F., México;5. Ciencia de Materiales, Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Unid. Prof. Adolfo López Mateos, México D.F. 07738, México;1. Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE, Brazil;2. Laboratório de Semicondutores, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marquês de São Vicente 225, Rio de Janeiro 22451-900, Brazil;3. Campus de Xerém, Universidade Federal do Rio de Janeiro, Duque de Caxias, RJ, Brazil;4. Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, Brazil;5. Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marquês de São Vicente 225, Rio de Janeiro 22451-900, Brazil;6. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;1. Graduate School of Life Sciences, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan;2. Division of Applied Chemistry, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan;1. Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany;2. Universitat Rovira i Virgili, Department d?Enginyeria Electronica, Elèctrica i Automàtica, Avda. Païson Catalans 26, Campus Sescelades, Tarragona 43007, Spain;1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;2. Applied Materials, 974 East Arques Avenue, Sunnyvale, CA 94085, USA |
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| Abstract: | We have investigated the influence of substrate type (GaAs vs. germanium) and of group-V precursor (AsH3 vs. TBAs) on the epitaxial quality of (In)(Al)GaAs layers. We evaluated these layers in terms of morphology, background contamination and doping characteristics. For final benchmarking of the individually optimised processes, we produced p-on-n single junction GaAs solar cells and compared their relative performance. This type of device is an excellent performance monitor for epitaxial layers as the fundamental operating mechanism is drift of minority carriers. The solar cell grown with TBAs on a germanium-substrate has a conversion efficiency under the AM1.5 solar spectrum, which compares favourably with the highest reported value for a p-on-n GaAs solar cell on Ge (Prog. Photovolt. Res. Appl. 8 (2000) 377). |
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