Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
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| Affiliation: | 1. Department of Biomedical Sciences, University of Padua, 35131 Padua, Italy;2. Department of Cell and Developmental Biology, Consortium for Mitochondrial Research, University College London, London WC1E 6BT, UK;3. Bioinformatics Image Core (BIONIC), MRC Laboratory for Molecular Cell Biology, University College London, Gower Street, London WC1E 6BT, UK;4. Cell Signalling and Autophagy Group, MRC Laboratory for Molecular Cell Biology, University College London, Gower Street, London WC1E 6BT, UK;5. Department of Molecular Bioscience, School of Veterinary Medicine, University of California, Davis, Davis, CA 95616, USA;6. Francis Crick Institute, London WC1E 6BT, UK;7. Myology Center (CIR-Myo), University of Padua, 35131 Padua, Italy;1. School of Mathematics, Indian Institute of Science Education and Research Thiruvananthapuram, Maruthamala P.O., Vithura, Kerala 695551, India;2. School of Mathematics, IISER Pune, Dr. Homi Bhabha Road, Pashan, Pune, 411008, India |
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| Abstract: | The structure and optical properties of In(Ga)As grown with the introduction of InGaAlAs or InAlAs seed dots layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved with the introduction of a layer of high-density buried dots. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. By analyzing the growth dynamics, we refer to it as an empty-core structure dot. |
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