Electrical conduction in ordered defect compounds |
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| Affiliation: | 1. Moldova State University, A. Mateevici 60, MD-2009 Chisinau, Republic of Moldova;2. Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia;1. Moldova State University, A. Mateevici 60, MD-2009, Chisinau, Republic of Moldova;2. Kazan Federal University, Kremlevskaya 18, 420008, Kazan, Russia;1. Laboratory of Physical Materials − University of LAGHOUAT, BP 37G, Laghouat, Algeria;2. Laboratoire de Matériaux Semi Conducteurs et Métalliques, Université de Biskra, Algeria;3. Laboratoire de Génie Energétique et Matériaux, LGEM, Université de Biskra, Algeria;4. Laboratoire de Physique des Rayonnements, Université Badji Mokhtar Annaba, Algeria;1. Universidade Federal da Fronteira Sul, 85770-000 Realeza, PR, Brazil;2. Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, DCTA, 12228-900 São José dos Campos, Brazil;3. Grupo de Pesquisa em Microeletrônica e Dispositivos Optoeletrônicos, Faculdade de Tecnologia e Ciências Exatas da Universidade São Judas Tadeu, 03166-000 São Paulo, SP, Brazil;1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275, China;2. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
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| Abstract: | A comparative study of the temperature dependence of electrical resistivity, carrier concentration and carrier mobility of the Ordered Defect Compounds (ODCs) CuIn3Se5, CuIn3Te5, and CuIn5Te8 with their corresponding normal 1:1:2 phase is reported. Relatively lower carrier concentration and higher activation energy observed in ODCs is explained on the basis that shallow acceptor or donor levels observed in 1:1:2 phase are partially annihilated in these compounds due to attractive interaction between VCu−1 and InCu+2 defect pair. In the activation regime, the mobility is explained by taking into account a scattering mechanism of the charge carriers with donor–acceptor defect pairs. The electrical data at lower temperatures is explained with the existing theoretical expression for the nearest neighbor hopping conduction mechanism. |
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