Preparation and characterization of Sb-doped SnO2 films with controlled stoichiometry from polymeric precursors |
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Affiliation: | 1. School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, PR China;2. Brook Byers Institute of Sustainable Systems, School of Civil and Environmental Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States;3. School of Chemistry & Biochemistry, Georgia Institute of Technology, Atlanta, GA, 30332, United States;1. College of Environmental Science and Engineering, Donghua University, China;2. Institute of Sustainable Energy/Department of Science, Shanghai University, China;1. Programa de Pós–graduação Em Engenharia de Processos, Universidade Tiradentes – UNIT, 49.032–490, Aracaju, Sergipe, Brazil;2. Laboratório de Eletroquímica e Nanotecnologia – LEN, Instituto de Tecnologia e Pesquisa – ITP, 49.032–490, Aracaju, Sergipe, Brazil;3. Departamento de Física, Universidade Federal de Sergipe – UFS, Campus Universitário, CEP: 49100–000, São Cristóvão, SE, Brazil;4. Departamento de Ciência e Engenharia de Materiais, Universidade Federal de Sergipe – UFS, Campus Universitário, CEP: 49100–000, São Cristóvão, SE, Brazil;5. Programa de Pós–graduação Em Engenharia Química, Escola Politécnica, Universidade Federal da Bahia – UFBA, CEP 40210–630, Salvador, BA, Brazil;6. Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara, Brazil;1. Department of Chemical Engineering, Xi''an University of Architecture and Technology, Xi''an, 710055, PR China;2. School of Metallurgical Engineering, Xi''an University of Architecture and Technology, Xi''an, 710055, PR China;1. School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, PR China;2. Tianjin Key Laboratory of Membrane Science and Desalination Technology, Tianjin 300072, PR China;3. Tianjin Mainland Hydrogen Equipment Co., LTD., Tianjin 300072, PR China |
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Abstract: | A polymeric precursor method was employed in order to obtain Sb/SnO2 thin films with well-controlled stoichiometry. The preparative process was studied by TGA–DTA of the precursor solutions. The EDX results show good agreement between the concentration in the precursor solutions and the Sb/Sn ratio in the films. XRD patterns present only the SnO2 cassiterite-type structure, without the presence of an Sb oxide, even at higher Sb concentrations. The increase in the amount of Sb leads to a decrease in SnO2 crystallinity. The film surface was analyzed by SEM, showing a cracked-mud type structure with the number of cracks depending on the calcination temperature and the Sb concentration. |
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