A combined carbon and oxygen segregation model for the LEC growth of SI GaAs |
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| Affiliation: | 1. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China;2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China;3. State Key Laboratory of Superhard Material, Jilin University, Changchun 130012, China;1. Naval Research Laboratory, 4555 Overlook Av. SW, Washington 20375, USA;2. Ferdinand-Braun-Institute, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;3. Institute of Physics, University of Brasilia, Asa Norte, 70919-970 Brasilia, DF, Brazil;1. Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, South Korea;2. Department of Physics, Dongguk University, Pil-dong, Jung-gu, Seoul 100-715, South Korea;3. Department of Information and Communications, Joongbu University, Chungnam 132-940, South Korea |
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| Abstract: | ![]()
The segregation behavior of carbon during the GaAs LEC process is described by a combined carbon and oxygen transport model. For this attempt the well-known Scheil formalism was extended by consideration of the incorporation and extraction of carbon via CO transport through the encapsulating boron oxide. The influence of the changing oxygen potential was included in order to describe the experimental data, especially for low carbon levels. The model is helpful for the adjustment of growth parameters relevant for carbon doping in order to achieve a homogeneous carbon distribution at any specified level. |
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