Feasibility of TFEL application of Ce-doped CaGa2S4 and SrGa2S4 films prepared by flash evaporation method |
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| Institution: | 1. LumiLab, Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Gent 9000, Belgium;2. Center for Nano and Biophotonics (NB-Photonics), Ghent University, Gent 9000, Belgium;3. Mechanics of Materials and Structures (MMS), Department of Materials, Textiles and Chemical Engineering (MaTCh), Ghent University, Tech Lane Ghent Science Park-Campus Ardoyen 46, Zwijnaarde 9052, Belgium;1. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;2. University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Ce-doped CaGa2S4 and SrGa2S4 thin films were prepared for the first time by the flash evaporation method. The films were characterized before and after annealing in H2S(10%)+Ar gas stream by measuring photoluminescence and absorption spectra, X-ray diffraction and electron probe micro analyses. X-ray diffraction curves and absorption spectra before annealing show amorphous behaviour, whereas the annealing leads to a significant crystallization and improves the stoichiometry of the films. Based on the performance data obtained from dispersive type EL cells using CaGa2S4:Eu powder together with photoluminescence property comparison between CaGa2S4:Eu and CaGa2S4:Ce powders, the annealed films prepared by flash evaporation can be considered to become one of the candidates for TFEL flat panel devices. |
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