Mid gap photoluminescence from GaN:Mn,a magnetic semiconductor |
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| Affiliation: | 1. Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia, Spain;2. University of Los Andes, Mérida, Venezuela;3. Center for Micro-nanotechnologies, Technical University of Ilmenau, Gustav-Kirchhoff-Str. 1, 98693, Ilmenau D-98684, Germany;1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea;2. Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 16229, South Korea;3. Research Institute of Advanced Materials & Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea;1. Institute of Process Machinery and Systems Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 4, 91052 Erlangen, Germany;2. Erlangen Graduate School in Advanced Optical Technologies (SAOT), Friedrich-Alexander Universitaet Erlangen-Nuernberg, Paul-Gordan-Straße 6, 91052 Erlangen, Germany;1. College of Science, China University of Petroleum, Beijing, China;2. State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China;3. KAUST Catalysis Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia;4. Shenzhen Chang Long Technology Co., Ltd., Shenzhen 518060, China;1. Department of Photonics, National Cheng Kung University, Tainan City, Taiwan;2. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City, Taiwan;3. Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan City, Taiwan;4. Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan City, Taiwan;1. Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;2. Insititute of Physics Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;3. Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;4. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, C3-1 Furo-cho, Chikusa-su, Nagoya 464-8603, Japan |
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| Abstract: | The defect and morphology of GaN monocrystals with Mn content 1019 cm−3 were examined by fluorescence confocal microscopy and spectroscopy. The fluorescence spectral investigation was carried out in a region very close to the defect centers. Contrary to earlier results, we did observe a characteristic fluorescence line of Mn corresponding to the 4T1→6A1 and 4T2→6A1 transitions, suggesting the predominant presence of Mn2+ (d5). In addition, strong emission lines were observed at 1.60 and at 1.85 eV when the sample was excited with light of 436 and 365 nm, respectively. An energy scheme is proposed to explain the observed data coherently. |
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