Ternary rare-earth arsenides REZn3As3 (RE = La-Nd, Sm) and RECd3As3 (RE = La-Pr)

Ternary rare-earth zinc arsenides REZn(3)As(3) (RE = La-Nd, Sm) with polymorphic modifications different from the previously known defect CaAl(2)Si(2)-type forms, and the corresponding rare-earth cadmium arsenides RECd(3)As(3) (RE = La-Pr), have been prepared by reaction of the elements at 800 °C. LaZn(3)As(3) adopts a new orthorhombic structure type (Pearson symbol oP28, space group Pnma, Z = 4, a = 12.5935(8) ?, b = 4.1054(3) ?, c = 11.5968(7) ?) in which ZnAs(4) tetrahedra share edges to form ribbons that are fragments of other layered arsenide structures; these ribbons are then interconnected in a three-dimensional framework with large channels aligned parallel to the b direction that are occupied by La(3+) cations. All remaining compounds adopt the hexagonal ScAl(3)C(3)-type structure (Pearson symbol hP14, space group P6(3)/mmc, Z = 2; a = 4.1772(7)-4.1501(2) ?, c = 20.477(3)-20.357(1) ? for REZn(3)As(3) (RE = Ce, Pr, Nd, Sm); a = 4.4190(3)-4.3923(2) ?, c = 21.4407(13)-21.3004(8) ? for RECd(3)As(3) (RE = La-Pr)) in which M(3)As(3)](3-) layers (M = Zn, Cd), formed by a triple stacking of nets of close-packed As atoms with M atoms occupying tetrahedral and trigonal planar sites, are separated by La(3+) cations. Electrical resistivity measurements and band structure calculations revealed that orthorhombic LaZn(3)As(3) is a narrow band gap semiconductor.