AG Festkörperspektroskopie, Institut fur Experimentalphysik III, Ruhr-Universität-Bochum, NB 3/70, 44780 Bochum NB, Germany
Abstract:
(0 0 1)Fe-mesa were grown on a GaAs high electron mobility transistor (HEMT)-structure. Magnetic properties were investigated by locally resolved photothermally modulated ferromagnetic resonance (PM-FMR). The surface and the in-plane anisotropy are decreased in HEMT-areas. The field independent response of PM-FMR provides information on the electrical properties of the GaAs-heterostructure and yields evidence of preparation dependent lifetime effects of the photo-carriers.