Noise Factor of Optically Controlled GaAs Field-Effect Transistors |
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| Authors: | I A Bocharova |
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| Institution: | (1) Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoiskii Tract, Minsk, 220090, Belarus |
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| Abstract: | The influence of IR radiation on the noise factor of GaAs field-effect transistors has been analyzed. It is shown that the noise factor of the indicated transistors decreases under IR irradiation. It has been established that a decrease in the noise factor of the field-effect transistors under IR irradiation is mainly due to an increase in the low-field mobility of electrons in them. |
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| Keywords: | GaAs field-effect transistor deep-lying centers noise factor low-field mobility of carriers |
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