Local atomic structure of Cu(In
x
Ga1−x
)Se2 (x = 0.25, 0.5, and 0.75) systems for solar cells |
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Authors: | A N Deev R G Valeev F Z Gil’mutdinov D E Gai |
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Institution: | (1) Physicotechnical Institute, Ural Division, Russian Academy of Sciences, Izhevsk, 426000, Russia;(2) Udmurt State University, Izhevsk, 426034, Russia |
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Abstract: | The local atomic structure of thin surface layers of crystalline quasi-binary Cu(In x Ga1?x )Se2 solid solutions was studied by SIMS and EXAFS techniques. The SIMS method showed that the elemental composition of the sample changes most significantly in thin layers at a depth of 5–10 nm; in deeper layers, the component concentrations correspond to the bulk values. The EXAFS method in the x-ray fluorescence mode showed that the results obtained are in agreement with the assumption that quaternary crystalline quasi-binary Cu(In x Ga1?x )Se2 solid solutions exhibit local disorder while average long-range order is detected from x-ray diffraction data. |
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Keywords: | |
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