Super low-noise HEMTs with a T-shaped WSix gate |
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| Authors: | Hanyu I Asai S Nunokawa M Joshin K Hirachi Y Ohmura S Aoki Y Aigo T |
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| Institution: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | A T-shaped quarter-micron gate structure composed of WSix /Ti/Pt/Au has been developed for low-noise AlGaAs/GaAs HEMTs. The gate resistance Rg was reduced to 0.3 Ω for devices with 200 μm-wide gates despite using WSix, and the source resistance Rs reached 0.28 Ω mm by minimising the source-gate distance using a self-alignment technique. This HEMT exhibited the lowest reported noise figure of 0.54 dB with an associated gain of 12.1 dB at 12 GHz |
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