High-temperature X-ray diffraction studies of compounds in the M
2
I
O-Ga2O3-TiO2 system |
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Authors: | A V Knyazev I V Ladenkov S S Knyazeva |
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Institution: | 1. Lobachevskii State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia
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Abstract: | Compounds that are formed in the M 2 I O-Ga2O3-TiO2 system and crystallize in three structural types were prepared by solid-phase reactions. The M 2 I Ga2Ti6O16 (MI = Na, K, Rb, Cs) compounds were prepared for the first time. The thermal expansion coefficients of LiGaTiO4, Na2Ga2Ti6O16, K2Ga2Ti6O16, Rb2Ga2Ti6O16, and Cs2Ga2Ti6O16 were determined by high-temperature X-ray diffraction. Some tendencies of thermal distortions in M 2 I A 2 III Ti6O16 and LiAIIITiO4 (MI = Na, K, Rb, Cs; AIII = Al, Cr, Fe, Ga) were disclosed. |
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