Domain structure of silicon iron single crystals

The model of a new domain structure arising after the magnetization of silicon iron single crystals in planes of the (110) type at an angle of 0°<Θ<-55° to the axis of easy magnetization is considered. Using this model the angular dependence of the domain-structure characteristics is established; it agrees closely with direct observations. On magnetizing a single crystal in the angular range 55° <Θ≤ 90° to the easy axis, layers with a uniform resultant magnetization parallel to the 001] direction are formed.