Optical measurements of stress distributions in GaAs at low temperature |
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Authors: | Martin Schmidt L Schmidt |
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Institution: | 1. Max-Planck-Institut für Festk?rperforschung, D-7000, Stuttgart, Fed. Rep. Germany
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Abstract: | We have measured the stress distribution at He temperature on two epitaxial GaAs wafers which were compressed along one edge. The stress was determined non-destructively at different points on the wafer surface by using the line-splitting and the lineshifts of the photoluminescence spectra of the acceptor-bound excitons in comparison with calibration spectra at known uniaxial stress. |
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