On the electronic and geometric structure of the Si(113) surface

The Si(113) surface of a p-type sample was studied by AES, LEED and ARUPS. On the clean surface, a (3 × 2) and a (3 × 1) LEED pattern coexist for a large range of annealing temperatures. Annealing to 900 K results in (3 × 1), while temperatures higher than 1050 K favour the (3 × 2) superstructure. ARUPS reveals two weakly dispersing surface resonances around 0.9 and 2.6 eV below E_F which are connected with the (3 × 2) and (3 × 1) structures, respectively. The work function was determined as φ = 4.81 eV and the photoionization threshold as ξ = 5.36 eV. The bands are bent downwards by 0.43 eV at room temperature.