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Intersubband transition in symmetric AlxGa1 − xN/GaN double quantum wells with applied electric field |
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| Authors: | SY Lei ZG Dong GY Zhang |
| Institution: | a Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, People's Republic of China b Physics Department, Southeast University, Nanjing 211189, People's Republic of China c State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China |
| Abstract: | Influence of the applied electric field (AEF) on the intersubband transitions (ISBTs) in symmetric AlxGa1 − xN/GaN double quantum wells (DQWs) is investigated by self-consistent calculation. It is found that three- and four-energy-level DQWs can be realized when suitable electric field is applied. When the AEF is 0.93 MV/cm, the 1odd-2even ISBT has a comparable absorption coefficient with the 1even-2odd ISBT, and the four-energy-level DQWs are realized. The wavelengths of the 1odd-2even and 1even-2odd ISBTs are located at 1.31 and 1.62 μm, respectively. When the AEF is 1.10 MV/cm, the 1odd-2even and 1odd-2odd ISBTs have comparable absorption coefficients, and the three-energy-level DQWs are realized. The wavelengths of the 1odd-2even and 1odd-2odd ISBTs are located at 1.30 and 1.55 μm, respectively. The results suggest promising application to two-color optoelectronic devices operating within optical communication wavelength band, and this study also provides a method for realizing the two-color optoelectronic devices by using the AEF. |
| Keywords: | 72 80 Ey 73 21 Fg 03 65 Ge |
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