Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots |
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Authors: | Congxin Xia Yaming Liu |
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Affiliation: | a Department of Physics, Henan Normal University, Xinxiang 453007, China b School of Mechanics and Electronics, Henan Institute of Science and Technology, Xinxiang 453007, China |
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Abstract: | Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width. |
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Keywords: | 73.21.La 71.55.-i |
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