Strongly-driven coarsening of height-selected Pb islands on Si(1 1 1) |
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Authors: | Maozhi Li J.W. Evans M. Hupalo T.-L. Chan |
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Affiliation: | a Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA b Ames Laboratory - USDOE and Department of Mathematics, Iowa State University, Ames, IA 50011, USA |
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Abstract: | A theoretical model is proposed to describe the rapid coarsening observed for Pb islands on a Si(1 1 1) surface where classical kinetics breaks down. In this system, quantum size effects produce mesa-like Pb islands with chemical potentials depending strongly on their heights, in addition to the usual dependence on the step curvature. Furthermore, a dense wetting layer enables fast mass transport between islands. Incorporating these features, our theoretical model predicts evolution of the island height distribution in good agreement with experiments. |
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Keywords: | Coarsening Rate equations Quantum size effects Metal-on-semiconductor thin film structures |
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