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Strongly-driven coarsening of height-selected Pb islands on Si(1 1 1)
Authors:Maozhi Li  J.W. Evans  M. Hupalo  T.-L. Chan
Affiliation:a Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
b Ames Laboratory - USDOE and Department of Mathematics, Iowa State University, Ames, IA 50011, USA
Abstract:A theoretical model is proposed to describe the rapid coarsening observed for Pb islands on a Si(1 1 1) surface where classical kinetics breaks down. In this system, quantum size effects produce mesa-like Pb islands with chemical potentials depending strongly on their heights, in addition to the usual dependence on the step curvature. Furthermore, a dense wetting layer enables fast mass transport between islands. Incorporating these features, our theoretical model predicts evolution of the island height distribution in good agreement with experiments.
Keywords:Coarsening   Rate equations   Quantum size effects   Metal-on-semiconductor thin film structures
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