Heterogeneous oxidation of Si(1 1 1) 7 × 7 monitored with Kelvin probe force microscopy |
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| Authors: | JM Sturm Bene Poelsema |
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| Institution: | Solid State Physics, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands |
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| Abstract: | Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding. |
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| Keywords: | Silicon Oxygen Kelvin probe force microscopy Atomic force microscopy Scanning probe techniques Work function measurements |
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