Analysis of transition processes in semiconductor diodes using charge formula |
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| Authors: | V I Gaman |
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| Institution: | (1) Kuznetsov Siberian Institute of Technical Physics, Russia |
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| Abstract: | The transition processes in a narrow-base semiconductor diode are analyzed by a charge method taking account of the p-n junction barrier capacitance. It is shown that the on and off transition switching processes of a diode can be described by three experimentally determined parameters. |
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