Damping of the magnetoplasmon propagating along a rough dielectric-semiconductor interface |
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| Authors: | A.A. Gabashvili A.A. Krokhin |
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| Affiliation: | Institute of Radiophysics and Electronics, Academy of Sciences of the Ukrainian SSR, Kharkov 310085, U.S.S.R. |
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| Abstract: | The damping of a surface magnetoplasmon propagating along a rough dielectric-semiconductor interface is considered. The interaction between charge carriers in the semiconductor and the boundary has been taken into account both in the “specularity parameter” and a microscopic model of the boundary. The effective surface relaxation frequency has been analyzed as a function of the boundary parameters and the magnetic field. |
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