Trap statistics and the gap density of states in amorphous materials

We present a one-electron theory of non-equilibrium trap occupancy in amorphous materials, with simple results for electrons in states above the equilibrium Fermi level. The density of these states can then be obtained by analysis of transient photoconductivity. Specific values are given for a-Si: H samples for energies in the range 0.55–0.40 eV below the conduction band mobility edge. We conclude that the state density there can be low, as suggested by the results of deep level transient spectroscopy.