Frequency dependent Shubnikov-De Haas oscillations in Si-MOS-FET under high magnetic fields |
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| Authors: | Y Iwasa G Kido N Miura |
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| Institution: | Institute for Solid State Physics, University of Tokyo Roppongi, Minato-ku, Tokyo 106, Japan |
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| Abstract: | The quantum oscillations in the AC magnetoconductance was studied for inversion layers in Si-MOS-FETs under high magnetic fields at 1.5 K. Each peak in the Shubnikov-de Haas oscillation was found to be remarkably sharpened with increasing frequency up to 50 MHz. It was also found that the width of the gate voltage for non-conductive region (σxx=0) increases with increasing frequency. |
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