Urbach edge and the density of states in hydrogenated amorphous silicon |
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| Authors: | T. Tiedje B. Abeles J.M. Cebulka |
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| Affiliation: | Corporate Research Laboratory, Exxon Research and Engineering Company, Linden, NJ 07036, U.S.A. |
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| Abstract: | Photoconductivity measurements of the optical absorption edge and time-of-flight measurements of the hole drift mobility, on the same amorphous silicon film, enable us to identify the origin of the Urbach edge in amorphous silicon with the density of states in the valence band tail. |
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