Magnetic interference effect in amorphous D-band metals with high electrical resistivity

Systematic occurence of low temperature resistivity anomalies (upturn) in amorphous alloys Zr₅₀Cu₅₀, Zr₇₅Ni₂₅, and Y₇₅A?₂₅ containing up to 4 at .% Gd is observed. Detailed analysis of ‘background’ impurity (other than Gd) effects on the electrical resistivity of the alloy host Zr₅₀Cu₅₀ provides unambiguous evidence that the anomalies are due solely to the Gd ions. The present results are interpreted in terms of conduction electrons with short mean free path scattering from nearest neighboring pairs of Gd spins. Predictions derived from the diffraction type model of magnetic interference, however, fail to describe all the results on metals with high electrical resistivity. Data on Zr₅₀Cu₅₀ containing Fe and Mn are also discussed.