The nature of temperature dependence of energy gaps in layer semiconductors |
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| Authors: | G.L. Belenkii E.Yu. Salaev R.A. Suleimanov N.A. Abdullaev |
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| Affiliation: | Institute of Physics, Academy of Sciences of Azerbaidzhan SSR, Prospect Narimanova 33, 370143 Baku, U.S.S.R. |
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| Abstract: | The temperature dependences of direct and indirect energy gaps in layer semiconductors GaS, GaSe and GaSxSe1?x are investigated in the temperature range 5–150 K. The nonmonotonous behaviour of Eg(T) dependences is observed in these crystals. It is shown that the effect of thermal expansion cannot in itself explain the observed anomalies. A new model of electron-phonon interaction explaining the Eg(T) behaviour in layer crystals is proposed. |
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