Electrical and optical properties of chemically deposited conducting glass for SIS solar cells

Thin layers of conducting glass (SnO₂:F) of 3 ohm per square sheet resistance were chemically deposited on borosilicate glass for potential applications in SIS solar cells. The layers exhibit 90% optical transmission at the solar maximum (0.5 μm). In an optical investigation of the conducting glass at room temperature, a direct allowed transition at 4.1 eV was observed. Indirect allowed transition was also observed with an energy gap of 2.65 eV and an assisting phonon of 0.05 eV. These observations were supported by reflectance data obtained by an integrating sphere. A technique of making ohmic contacts with SnO₂:F layers is also described.