Absorption measurements at high pressure (0–10kbar) on strained superlattices |
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| Authors: | P. Garrilovic K. Meehan N. Holonyak K. Hess W.P. Zurawsky H.G. Drickamer M.J. Ludowise W.T. Dietze C.R. Lewis |
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| Affiliation: | Electrical Engineering Research Laboratory and Materials Research Laboratory University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;Corporate Solid State Laboratory, Varian Associates, Inc. 611 Hansen Way, Palo Alto, California 94303, USA |
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| Abstract: | Absorption data on strained GaAs1?xPx-GaAs superlattices (SL, 128-period, barrier size LB≈75 Å, quantum-well size Lz≈75 Å, alloy composition x≈0.25) are presented in the range 0–10 kbars. The absorption curves obtained show no exciton show no exciton peaks such as seen in lattice- matched AlxGa1?xAs-GaAs SL's, and the pressure coefficient decreases from 11.5 meV/kbar to ≈ 10.5 meV/kbar in the wells and ≈6.5 meV/kbar at energies approaching and above the barrier energies. This behavior is attributed to the fluctuations in strain caused by the alloy disorder, and clustering, of the barriers. |
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