The effect of hydrogen chemisorption on GaAs(100) and GaAs(1̄1̄1̄) |
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| Authors: | R.D. Bringans R.Z. Bachrach |
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| Affiliation: | 1. Stanford Synchrotron Radiation Laboratory, P.O. Box 4349, Stanford University, Stanford, CA 94305, USA;2. Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304, USA |
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| Abstract: | The interaction of hydrogen with the polar (100) and (1̄1̄1̄) surfaces of GaAs has been studied with LEED, angle-resolved photoemission and core level spectroscopy. It was found that the properties of the hydrogen-covered surface were independent of the composition of the initial surface. The core levels also showed an increase in the surface As concentration for initially Ga-rich surfaces. Angle-resolved photoemission results for GaAs(100) and GaAs(100):H are presented and the dispersion of a hydrogen-induced state is shown. |
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