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The semiconductor-electrolyte interface : Optical transitions in CdMnTe alloys
Authors:Philippe Lemasson  Bing-Liang Wu  Robert Triboulet  Jacques Gautron
Affiliation:1. Laboratoire d''Electrochimie Interfaciale, C.N.R.S.,1, Place A. Briand 92195 Meudon Principal Cedex, France;2. Laboratoire de Physique des Solides, C.N.R.S., 1, Place A. Briand 92195, Meudon Principal Cedex, France
Abstract:The junction p-Cd1?xMnxTe-electrolyte is studied under monochromatic illumination for the alloy composition range 0 ≤ x ≤ 0.7. Optical transitions in the semiconductor are evidenced by photocurrent measurements. In the composition range 0 ≤ x ≤ 0.45, the nature of the fundamental transition appears to be the same as in CdTe (valence band Γ → conduction band Γ ). For x > 0.45, the observed photocurrent p
/></figure>ak, pinned at a consta<figure class=/></figure>t energy value ca. 2.1 eV, may presumably be related to a transition Γ → d(Mn) level whereas the photocurrent edge associated to the forme<figure class=/></figure> transition increases linearly with x.</td>
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