Two frequency light induced absorption and energy density of localized states in amorphous semiconductors |
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| Authors: | VG Kudryavtsev MI Ryazanov SN Taraskin |
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| Institution: | Moscow Engineering Physics Institute, Moscow, 115409, U.S.S.R. |
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| Abstract: | Infrared light induced absorption is proposed to determine the energy dependence of localized electrons' density in amorphous semiconductors. The possibility of the experimental test of energy independence of the recombination coefficients is shown. |
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