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Photo-admittance spectroscopy
Authors:M. Kleverman  E. Janzén  H.G. Grimmeiss
Affiliation:Department of Solid State Physics, University of Lund, Box 725, S-220 07 Lund, Sweden
Abstract:We present a junction technique for measuring the spectral distribution of photoionization cross sections of centers located in the forbidden band gap of semiconductors. It is especially suitable for centers where the effect of background radiation is very disturbing and should be considered as a less expensive alternative to the Fourier photo-admittance spectroscopy technique which has been described previously.
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