Observation of field quenching of photo-induced effects in hydrogenated amorphous silicon |
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| Authors: | I. Sakata Y. Hayashi H. Karasawa M. Yamanaka |
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| Affiliation: | Semiconductor Device Section, Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niiharigun, Ibaraki 305, Japan |
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| Abstract: | Field quenching phenomena were observed in the photo-induced changes in dark current—voltage and dark low frequency capacitance-voltage characteristics of hydrogenated amorphous silicon (a-Si:H) diodes. The photo-induced changes in photoconductivity of undoped a-Si:H measured in coplanar type samples also depended on the externally applied electric field. The mechanisms of the field quenching were discussed referring to trapping and/or recombination of photogenerated carriers in a-Si:H. |
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