Properties of vanadium in InP |
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Authors: | B Lambert B Deveaud Y Toudic G Pelous JC Paris G Grandpierre |
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Institution: | 1. IUT DE LANNION - Université de RENNES - 22302 Lannion France;2. CNET (LAB/ICM) - 22301 Lannion - France |
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Abstract: | Experiments are performed on InP/V single crystals extracted from a polycristalline ingot grown in a two zones gradient freeze furnace; in photoluminescence (PL) we observe a band with two zero phonon lines at 5692.5 cm-1 and 5705.5 cm-1. Photoluminescence excitation (P.L.E.) spectra have also been observed. This type of luminescence spectra has already been observed in V doped GaAs and GaP and attributed to an internal transition of V2+ (3 d3). D.L.T.S. and O.D.L.T.S. experiments do not reveal any deep level in the forbidden band gap. These two results seem to indicate a puzzling behaviour of V in InP as in GaAs which is discussed in the framework of a model proposed for GaAs/V : the V2+ ground state has a large relaxation energy and so, the excited states giving rise to the P.L. and P.L.E. spectra are not resonant with the conduction band. |
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